M. : Technosphere, 2011. — 256 s. The book is a manual on the physical foundations and technology of transistors on wide-band semiconductors. The properties of two-dimensional electron gas and the physics of heterojunctions, mainly of the Al. type, are considered. GaN/GaN. An overview of the structures of transistors based on GaN wide-band semiconductor. Structures of transistors on diamond and silicon carbide. The properties of substrates made of sapphire, silicon carbide and other materials used to create heterostructures. are considered. Methods of manufacturing heterojunctions using epitaxy from metal-organic compounds and molecular-beam epitaxy . are analyzed in detail Requirements for ohmic contacts and Schottky barriers are considered, during the use of which heteroepitaxial field transistors with high electron mobility in the channel (NET) are created. Technology of transistors on diamond is considered. A detailed review of the methods of control of technological processes used in the manufacture of transistors. Methods of measuring the main parameters of microwave transistors and methods for monitoring the reliability of transistors. The book is intended for students enrolled in the profile 210100 "Electronics and nanoelectronics" . The book will also be useful to masters, graduate students, engineers and researchers specializing in the development and application of solid-state electronics products ..