The tutorial outlines the physical aspects of designing digital silicon chips in solid-state and hybrid design. Issues of designing MOS and bipolar transistors and diodes, as well as passive elements (resistors, capacitors, conductors and contact nodes) are considered. Detailed questions of design of elements of hybrid chips. Much attention is paid to the design of MOS and CMOS integrated circuits, since at present these IMS occupy a leading position in the production of chips in general. A feature of this tutorial is the description of methods to improve the reliability and radiation resistance of IMS, since chips are widely used in extreme conditions. The training manual is intended for teachers, graduate students and students specializing in the field of microelectronics, electronics, electronic measuring systems, as well as for specialists interested in improving the reliability and radiation resistance of IMS.