Defects in silicon and on its surface
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The processes of formation of defects in crystalline silicon are considered. The analysis of the microstructure of defects is given, information is given about the energy spectrum of local electronic states associated with various types of defects in the volume and on the surface of silicon crystals. It is told about the processes of migration of defects, their interactions with each other I with impurities . For physicists and engineers engaged in fundamental research and solving practical problems of modern "silicon" microelectronics, as well as for senior students of relevant specialties
LF/9688759/R
Data sheet
- Name of the Author
- Вавилов
Киселев
Мукашев. - Language
- Russian
- Series
- Физика полупроводников и полупроводниковых приборов, ФПИПП
- ISBN
- 9785020140233
- Release date
- 1990
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The processes of formation of defects in crystalline silicon are considered. The analysis of the microstructure of defects is given, information is given about ...