No582 Physico-chemical bases of doping. Section : Physico-chemical calculations in the practice of doping of semiconductor mothers

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Book 582 Physico-chemical bases of doping. Section: Physico-chemical calculations in the practice of doping semiconductor materials" by the authors Evseev V. A. and Krapukhina B. In. is an important work that immerses the reader in the world of physics and chemistry of semiconductors This publication will be of particular interest to specialists in the field of materials science, solid state physics and electronics, as well as students and graduate students seeking to deepen their knowledge in this complex but fascinating field. The book covers a wide range of topics related to the doping of semiconductors and offers the reader a unique combination of theoretical foundations and practical calculations. The authors consider in detail the physico-chemical processes occurring during doping, which allows the reader not only to understand the basic principles, but also to apply them in practice. The importance of alloying semiconductors to create high-quality materials and devices, such as transistors and diodes, cannot be overstated. This book will be an indispensable assistant for those who want to understand the intricacies and nuances of doping, as well as its impact on the electrical and optical properties of semiconductors. The style of the authors is distinguished by clarity and accessibility of presentation, which makes complex concepts more understandable even for those who are just starting their way in this area. Evseev and Krapukhin use many examples and illustrations, which allows the reader not only to assimilate the material, but also to visualize it. This is especially important for students and young professionals who may face difficulties in understanding complex physical processes. The topics raised in the book cover not only the physical and chemical bases of doping, but also modern methods of analysis and calculation used in practice. The authors emphasize the importance of accurate calculations and their impact on the final properties of materials. This allows the reader to realize how theoretical knowledge can be applied to achieve practical results, making the book particularly valuable for engineers and researchers. The book 582 Physical and chemical bases of doping will be an excellent addition to the library of any specialist in the field of semiconductors. It will be useful both for those who already have experience in this field, and for beginners seeking to understand the basics of doping and its practical application. Readers interested in topics such as semiconductor physics, electronics materials, and doping technology will find much useful information in this edition. If you’re looking for literature that will help you better understand the physicochemical processes in semiconductors, this book will be your reliable companion. It will not only enrich your knowledge, but also inspire further research and experiments in the field of materials science. Do not miss the opportunity to immerse yourself in the fascinating world of doping semiconductors with Evseyev and Krapukhin - their work will be an important step towards your scientific and professional achievements.
LF/154362651/R
Data sheet
- Name of the Author
- В. А.
В. В.
Евсеев
Крапухин - Language
- Russian
- Release date
- 1980