Гигантское магнитосопротивление
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The article is devoted to a new phenomenon - giant magnetoresistance (GMS) found in magnetic multilayers and magnetic semiconductors. This effect is due to the peculiarities of scattering spin-polarized current carriers in heterogeneous magnetic structures and multilayers. Prospects for the technical use of magnetoresistive sensors with GMS in highly sensitive heads for reading information are discussed
LF/588196643/R
Data sheet
- Name of the Author
- Никитин С.А.
- Language
- Russian
- Release date
- 2004
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The article is devoted to a new phenomenon - giant magnetoresistance (GMS) found in magnetic multilayers and magnetic semiconductors. This effect is due to the ...